| PART |
Description |
Maker |
| IDT72V70200PFGBLANK IDT72V7020008 IDT72V70200PFBLA |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
Integrated Device Technology
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M41T56M6E M41T56M6F M41T56MH6E M41T56MH6F M41T56 |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
STMicroelectronics
|
| M41T56 M41T56M M41T56MH M41T56SH |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| WE32K32N-120H1QA WE32K32N-150G2UC WE32K32N-150G2UI |
Access time:120 ns; 32K x 32 EEPROM module, SMD 5962-94614
Access time:150 ns; 32K x 32 EEPROM module, SMD 5962-94614
|
White Electronic Designs
|
| M41T81M6 M41T81M6TR M41T81MX6 M41T81MX6T M41T81M6E |
SERIAL ACCESS RTC WITH ALARMS
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
256K X 8 FLASH 5V PROM, 70 ns, PDSO32
Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
|
SPANSION LLC
|
| CY14B108K-ZS25XI CY14B108K-ZS25XIT CY14B108K-ZS45X |
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| CY14B512PA-SFXI CY14B512PA-SFXIT CY14C512PA12 |
512-Kbit (64 K × 8) SPI nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
