| PART |
Description |
Maker |
| FDS8962C |
30V Dual N & P-Channel PowerTrench MOSFET
Dual N & P-Channel Power Trench
|
Fairchild Semiconductor Corporation
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| PMGD175XN |
30 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDXB600UNE |
20 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| SUF2001 |
30V Dual N-and P-channel Trench MSFET
|
KODENSHI KOREA CORP.
|
| FDMC8030 |
Dual N-Channel Power Trench? MOSFET 40 V, 12 A, 10 mΩ
|
Fairchild Semiconductor
|
| FDMD8280 |
Dual N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| BSS138BKS |
60 V, 320 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDMS3006SDC |
N-Channel Dual CoolTM Power Trench? SyncFETTM 30 V, 49 A, 1.9 mΩ
|
Fairchild Semiconductor
|
| NX3008NBKS NX3008NBKS-15 |
30 V, 350 mA dual N-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
