| PART |
Description |
Maker |
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| MMT3823 |
JUNCTION FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| 2N3456 |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT
|
New Jersey Semi-Conductor Products, Inc.
|
| NJ26 |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ36D |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ903 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| NJ1800DL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ1800D |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| IFN5432 IFN5433 IFN5434 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| NTE312 |
N-Channel Silicon Junction Field Effect Transistor
|
NTE[NTE Electronics]
|
