| PART |
Description |
Maker |
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6203 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6205 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| M69KB096AB80DW8 M69KB096AB M69KB096AB80CW8 |
64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| S4105 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6201 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| 5SMX12L2511 |
IGBT-Die 54 A, 2500 V, N-CHANNEL IGBT
|
ABB, Ltd.
The ABB Group
|
| 5439450091000 543945009500 543945009U500 543945009 |
20 AWG solid bare copper conductor, foam polyethylene insulation, bare copper braid shield, PVC jacket, sequential footage marking every two feet.
|
List of Unclassifed Man...
|
| 5SMY12K1201 |
IGBT-Die
|
The ABB Group
|
