| PART |
Description |
Maker |
| AUIRFS3107TRR |
195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
|
| IRFS3107TRRPBF IRFS3107PBF IRFS3107PBF-15 |
195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| STD150NH02L-1 9072 |
N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION
From old datasheet system
|
STMicroelectronics
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| MMFT60R195PC MMFT60R195PCTH |
600V 0.195(ohm) N-channel MOSFET
|
MagnaChip Semiconductor...
|
| NX8570SC646-BA NX8570SC642-CA NX8570SC642-BA NX857 |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1564.679 nm. Frequency 191.60 THz. FC-PC connector.
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1564.271 nm. Frequency 191.65 THz. SC-PC connector.
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1564.271 nm. Frequency 191.65 THz. FC-PC connector.
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1564.679 nm. Frequency 191.60 THz. SC-PC connector.
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1537.003 nm. Frequency 195.05 THz. FC-PC connector.
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1537.003 nm. Frequency 195.05 THz. SC-PC connector.
|
NEC
|
| SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
http://
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| IRFK6J054 IRFK6H054 |
350 A, 60 V, 0.003 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
ISOLATED BASE POWER HEX-PAK ASSEMBLY PARALLEL CHIP
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
60V SINGLE HEXFET Power MOSFET in a TO-240AA package
|
IRF[International Rectifier]
|
| 1203-31-7 |
FOR USE WITH BELDEN RF 195 CABLE
|
Winchester Electronics Corp...
|
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