| PART |
Description |
Maker |
| ZVN2106G ZVN2106GTA |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes
|
| ZVNL110G |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes Incorporated
|
| ZXMN6A11GTA ZXMN6A11G_06 ZXMN6A11G |
60V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A11G06 |
60V SOT223 N-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| ZXMN6A08GTC ZXMN6A08GTA ZXMN6A08 ZXMN6A08G |
60V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A25GTA |
60V SOT223 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZVN2106G ZVN2106 ZVN2106GTA |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| BCX54 BCP54 BCX54-10 BCX54-16 BCP54-16 BC635 BC635 |
45 V, 1 A NPN medium power transistors
Si, POWER TRANSISTOR
BCP54<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP54<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;BCP54-16<SOT223 (SC-73)|<<http:
NPN medium power transistors
|
NXP[NXP Semiconductors]
NXP Semiconductors N.V.
|
| ZVP2106GTA |
MOSFET P-CH 60V 450MA SOT223 0.45 A, 60 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Zetex Semiconductor PLC
|
| BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors
General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250
General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
