| PART |
Description |
Maker |
| NTD5406NT4G NTD5406N |
Power MOSFET, 40 V, 70 A, Single N-Channel
Power MOSFET 40 V, 70 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12.2 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| OM6059SB OM6056 OM6061SB OM6056SB OM6057SB OM6058S |
High Current, High Voltage 500V , 58 Amp N-Channel, MOSFET(大电流，高电压，500V , 58A，N沟道，MOS场效应管)
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE
100V Single N-Channel Hi-Rel MOSFET in a PB-3A package
500V Single N-Channel Hi-Rel MOSFET in a PB-3A package
600V Single N-Channel Hi-Rel MOSFET in a PB-3A package
200V Single N-Channel Hi-Rel MOSFET in a PB-3A package
|
List of Unclassifed Manufacturers
International Rectifier
ETC[ETC]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFRU1205 IRFU1205 IRFR1205 IRFR1205TRR INTERNATIO |
(IRFR1205 / IRFU1205) Power MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
|
International Rectifier
|
| ULS-2812H-883 ULS-2802H-883 ULS-2012H-883 ULS-2022 |
N-CHANNEL 100V - O.33 Ohm - 2A SOT-223 STRIPFET POWER MOSFET
N-channel 500V - 2.5O - 4A - TO-220 PowerMESH™ II MOSFET
Single exclusive OR gate
Single bus buffer (3-state)
SINGLE 8 CHANNEL ANALOG MULTIPLEXERS-DEMULTIPLEXERS
Single 2-input OR gate
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS
GPS PROCESSOR 八进制外设驱
Quad 2-input nand gate 2输入与非
Single inverter 单反相器
N-channel 100V - 0.32 O - 5A - TO-251/TO-252 STripFET™ Power MOSFET
|
Allegro MicroSystems, Inc.
Panasonic, Corp.
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)
HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??)
4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
| STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-CHANNEL Power MOSFET
PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIB41N15D IRFSL41N15D IRFB41N15D IRFS41N15D IRFI |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
150V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak(Iso)
|
IRF[International Rectifier]
|
| IRCZ44 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Hexfet? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
|
IRF[International Rectifier]
|
