| PART |
Description |
Maker |
| PS25401A PS25401B |
EPIC ULTRA HIGH IMPEDANCE MOVEMENT SENSOR
|
List of Unclassifed Manufacturers
|
| PS25201A PS25201B |
EPIC ULTRA HIGH IMPEDANCE ELECTROPHYSIOLOGICAL SENSOR
|
List of Unclassifed Man...
|
| 2N4117TO-71 |
an Ultra-High Input Impedance N-Channel JFET
|
Micross Components
|
| SST4118SOT-23 |
an Ultra-High Input Impedance N-Channel JFET
|
Micross Components
|
| SGH23N60UFD SGH23N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
High Input Impedance
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| SST4117SOT-23 |
an Ultra-High Input Impedance N-Channel JFET
Linear Systems replaces discontinued Siliconix SST4117
|
Micross Components
|
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| IRF7910PBF08 IRF7910PBF-15 IRF7910TRPBF |
HEXFET Power MOSFET
Ultra-Low Gate Impedance
Ultra-Low Gate Impedance
|
International Rectifier
|
| HA3-2625-5 HA9P2625-5 HA9P2625-9 HA-2620 HA-2625 H |
From old datasheet system
100MHz High Input Impedance Very Wideband Uncompensated Operational Amplifiers
100MHz/ High Input Impedance/ Very Wideband/ Uncompensated Operational Amplifiers
INDUCTOR PWR TOROID 2.5UH SMD
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HA2-2525-5 HA3-2525-5 HA7-2525-5 HA9P2525-5 HA2520 |
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers 0MHz，高压摆率，无偿，高输入阻抗，运算放大器
20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SK246 2SK246GR 2SK246BL K246 2SK246Y |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
