PART |
Description |
Maker |
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
IS42VM16100G IS42VM16100G-6BLI |
512K x16Bits x2Banks Low Power Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF |
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 4 Banks x 2M x 16bits Synchronous DRAM SDRAM - 128Mb
|
HYNIX SEMICONDUCTOR INC
|
M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
|
Elite Semiconductor Memory Technology, Inc.
|
HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|