PART |
Description |
Maker |
IRGMC40F |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier
|
IRG4MC30F |
600V DISCRETE Hi-Rel IGBT in a TO-254AA package
|
International Rectifier, Corp.
|
OM5007ST OM5005ST OM5006ST OM5002ST OM5001ST OM500 |
15 Amp, 50 To 600 Volts, 35 To 50 ns trr 100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package 15 AMP ULTRA FAST RECTIFIER IN SMALL HERMETIC PACKAGE 600V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package 150V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package
|
IRF[International Rectifier]
|
HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
|
International Rectifier
|
IRG4PC30 IRG4PC30F IRG4PC30F-EPBF IRG4PC30FPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 31 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
Vishay Intertechnology, Inc. International Rectifier
|
IRG4PC30K IRG4PC30KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
PSEM-3 PSEM-4-1B PSEM-4-500B PSE-4-01B PSE-4-500B |
PHASE SHIFTERS 32V 5A Single Channel Hi-Rel IGBT Gate Driver in a F-12A package; A OM9401SF with Standard Packaging Analog IC 100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package; A OM5002ST with Standard Packaging
|
Merrimac Industries, Inc.
|
IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HFA40HF60 |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|