| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYR183240G-845 HYR183240G-840 HYR183240G-745 HYR18 |
RDRAMModules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued
RDRAMModules - 512MB RIMM Module (256Mx18) PC600-53 Discontinued
RDRAMModules - 256MB RIMM Module (128Mx18) PC600-53 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued
RDRAMModules - 128MB RIMM Module (64Mx18) PC600-53 Discontinued
RDRAMModules - 256MB RIMM Module (128Mx16) PC600-53 Discontinued
RDRAM?Modules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued
128 MB (64M x 18) PC800-40 ECC RIMM M...
RDRAM?Modules - 512MB RIMM Module (256Mx18) PC800-45 Discontinued
512 MB (256 Mx 18) PC800-40 ECC RIMM ...
RDRAM?Modules - 256MB RIMM Module (128Mx18) PC800-45 Discontinued
256 MB (128M x 18) PC800-40 ECC RIMM ...
RDRAM?Modules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued
128 MB (64M x 16) PC800-40 RIMM Module
RDRAM?Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued
RDRAM?Modules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued
256 MB (128M x 16) PC800-40 RIMM Module
Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块（88兆RDRAMs
|
INFINEON[Infineon Technologies AG]
|
| HY5R256HCXXX HY5R256HC745 |
RDRAM
|
Hynix Semiconductor
|
| MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic components
|
| K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
| K4R271669F |
128Mbit RDRAM(F-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C- |
144M RDRAM Component
|
Infineon
|
| MSM5716C50 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
