| PART |
Description |
Maker |
| BAS16TPT |
SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere
|
Chenmko Enterprise Co. Ltd.
|
| BAS16VPT |
SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere
|
Chenmko Enterprise Co. Ltd.
|
| 5KP10 5KP100 5KP10A 5KP100A 5KP36 5KP8.5A 5KP30 5K |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:50-110V PEAK PULSE POWER: 5000W
TRANSZORBTRANSIENT VOLTAGE SUPPRESSOR TRANSZORB⑩瞬态电压抑制器
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: RC Soft Switching Series 8-60 kHz; Package: TO-247; VCE (max): 1,000.0 V; IC(max) @ 25°: 60.0 A; IC(max) @ 100°: 30.0 A
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
|
Shanghai Sunrise Electronics
GE Security, Inc.
General Semiconductor
|
| BAV70BPT |
FAST SWITCHING DIODE VOLTAGE RANGE 100 Volts CURRENT 150 mAmpere
|
Chenmko Enterprise Co. Ltd.
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| M1MA142KT1G M1MA141KT1 M1MA142KT1 M1MA141K M1MA142 |
SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
Single Switching Diode
|
ONSEMI[ON Semiconductor]
|
| 1N4148W-7-F BAV16W-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| 1N6639US 1N6639 1N6641US 1N6641 1N6640US 1N6640 |
300 mAmp 75-100 Volts 4 nsec Computer Switching Diode 0.3 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| DK400LP |
100 mA Switching Diode 80 Volts
|
Micro Commercial Components
|
| DAN202U |
100 mA Switching Diode 80 Volts
|
Micro Commercial Components
|
| 1N4148WLP13 |
100 mA Switching Diode 80 Volts
|
Micro Commercial Components
|
