| PART |
Description |
Maker |
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| BAT54S-V BAT54-V BAT54A-V BAT54-V10 BAT54C-V BAT54 |
Small Signal Schottky Diodes, Single and Dual
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| D83C D13-1C D13-3C D13-2C D14-2C D14-1C D14-3C D10 |
Single-In-Line
DIODE NETWORKS D SERIES
0.1 A, 5 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 7 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 13 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
|
BI TECHNOLOGIES CORP
|
| 1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE
1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
| MA141WATX MA142AH 2SK663H |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, SILICON, SIGNAL DIODE
30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
PANASONIC CORP
|
| RTD12 BCD25 BCD35 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.1 A, 25000 V, SILICON, SIGNAL DIODE
0.1 A, 35000 V, SILICON, SIGNAL DIODE
|
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
|
