PART |
Description |
Maker |
S29AL016J55TFIR10 S29AL016J55FFIR20 S29AL016J55TFI |
1M X 16 FLASH 3V PROM, 55 ns, PDSO48 LEAD FREE, MO-142DDD, TSOP-48 1M X 16 FLASH 3V PROM, 55 ns, PBGA64 1M X 16 FLASH 3V PROM, 55 ns, PBGA48 1M X 16 FLASH 3V PROM, 55 ns, PDSO56
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Spansion, Inc. SPANSION LLC
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
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PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44 1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40 1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
|
Intel, Corp. INTEL CORP
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SST25VF040-20-4C-S2AE SST25VF020-20-4C-SAE SST25VF |
4M X 1 FLASH 2.7V PROM, PDSO8 4 Mbit Uniform Sector, Serial Flash Memory 4M X 1 FLASH 2.7V PROM, DSO8
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
S29NS016J0PBJW003 S29NS064J0LBJW000 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 1M X 16 FLASH 1.8V PROM, 65 ns, PBGA44 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
|
Spansion, Inc. SPANSION LLC
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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K8P3215UQB-PE4B0 K8P3215UQB-DI4A0 |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48 2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
|
Analog Devices, Inc. STMicroelectronics N.V.
|
E28F008S5-90 PA28F008S5-90 |
1M X 8 FLASH 5V PROM, 90 ns, PDSO40 10 X 20 MM, TSOP-40 1M X 8 FLASH 5V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
|
Intel, Corp. Numonyx Asia Pacific Pte, Ltd.
|
SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC
|
AM29LV004BT-80FE AM29LV004BB-80EI AM29LV004BT-80FC |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO40 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
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