PART |
Description |
Maker |
M391T5663FB3-CE7 |
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
|
W3EG2128M64ETSR335JD3MG |
256M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
M392B5270DH0-CK0 M392B5773DH0-CF8 |
512M X 72 DDR DRAM MODULE, 20 ns, DMA240 256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
M471B5673DZ1-CG8 M471B6474DZ1-CG8 |
256M X 64 DDR DRAM MODULE, DMA204 64M X 64 DDR DRAM MODULE, DMA204
|
|
MT18JDF25672PZ-1G1F1 |
256M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE, RDIMM-240
|
STMicroelectronics N.V.
|
NT2GC64B8HA1NS-CG |
256M X 64 DDR DRAM MODULE, ZMA204 ROHS COMPLIANT, SODIMM-204
|
Nanya Technology, Corp.
|
MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90 128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
EBJ21EE8BAWA-8C-E EBJ21EE8BAWA-AE-E EBJ21EE8BAWA-D |
256M X 72 DDR DRAM MODULE, DMA240 2GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
HMT351V7BMR4C-G7 HMT351V7BMR4C-H9 HMT112V7BFR8C-G7 |
240pin DDR3 SDRAM VLP Registered DIMM 256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 0603 18 OHM 1/16W RESISTOR, 1K, 1%, SMT 0603 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
HY5DU561622CT-D4 HY5DU56822CT-D4 HY5DU56822CT-D43 |
256M-P DDR SDRAM 32M X 8 DDR DRAM, 0.65 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|