| PART |
Description |
Maker |
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| 7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) 15 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SEMIX703GB126HD SEMIX703GB126HD07 |
Trench IGBT Modules 700 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
