| PART |
Description |
Maker |
| MAX98500EWE MAX98500 UPC2712TB MAXIMINTEGRATEDPROD |
RF Amplifier 5V Widebnd Amplifier
Boosted 2.2W Class D Amplifier with Automatic Level Control
|
Rectron Semiconductor
Maxim Integrated Products
|
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| TDA7266L TDA266L |
5W MONO BRIDGE AMPLIFIER 5W单声道桥式放大器
AUDIO AMPLIFIER,SINGLE,SIP,10PIN,PLASTIC
7 7W DUAL BRIDGE AMPLIFIER
From old datasheet system
|
STMicroelectronics N.V.
ST Microelectronics
|
| CD1353CP |
2.4W Audio Amplifier / SIF Amplifier and Detector
2.4W AUDIO AMPLIFIER, SIF AMPLIFIER AND DETECTOR FOR TV SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
|
List of Unclassifed Manufacturers
ETC[ETC]
Shaoxing
|
| CPH5902 |
Pch Nch
High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
|
Sanyo Semicon Device
|
| S1724BBBA S1724BDBA S1724CBBA S1724CDBA S1724DDBA |
Optical amplifier platform, erbium-doped fiber amplifier. P0=16.0 dBm. Connector FC/PC. Without heat sink.
Optical Amplifier Platform1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform/1724-Type Eribium-Doped Fiber Amplifier(S and V Series)
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(S and V Series) 光放大器平台,1724 -型Eribium铒光纤放大器（S和V系列
BOARD INTERFACE KGZ/GMS 0-25%
Optical amplifier platform, erbium-doped fiber amplifier. P0=13.0 dBm. Connector FC/PC. Without heat sink.
|
AGERE[Agere Systems]
ERICSSON
Austin Semiconductor, Inc
|
| LT1167ACN8 LT1167ACS8 LT1167CN8 LT1167CS8 LT1167IN |
Single Resistor Gain Programmable/ Precision Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 100 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
TRANS NPN 100VCEO .5A TO-126
|
Linear Technology, Corp.
Linear Technology Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
