| PART |
Description |
Maker |
| WL2208-L WL1015-L WL1008-L |
Wideband LNA
|
RFHIC
|
| HMC-C002 |
WIDEBAND LNA MODULE, 2 - 20 GHz
|
Hittite Microwave Corporation
|
| BGB707L7ESD |
C Wideband MMIC LNA with Integrated ESD Protection
|
Infineon Technologies AG
|
| SX1701A SX1701AI085TRT |
Highly linear wideband LNA Single-channel, single-ended to differential conversion
|
Semtech Corporation
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| SLN-286 |
DC-3.5 GHz, 3 volt 50 ohm LNA MMIC amplifier
DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier
|
STANFORD[Stanford Microdevices]
http://
|
| HA3-2625-5 HA9P2625-5 HA9P2625-9 HA-2620 HA-2625 H |
From old datasheet system
100MHz High Input Impedance Very Wideband Uncompensated Operational Amplifiers
100MHz/ High Input Impedance/ Very Wideband/ Uncompensated Operational Amplifiers
INDUCTOR PWR TOROID 2.5UH SMD
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HA2-2602_883 HA-2602883 HA-2602_883 HA-2602/883 HA |
Wideband, High Impedance Operational Amplifier OP-AMP, 5000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8
Wideband, High Impedance Operational Amplifier 宽带，高阻抗运算放大
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BFG541 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| BFG198 |
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
NPN 8 GHz wideband transistor
|
NXP
Philips Semiconductors
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
