| PART |
Description |
Maker |
| NTE6006 NTE6007 NTE6008 NTE6009 NTE6011 NTE6010 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
Fast Recovery Rectifier / 40A / 200ns
Fast Recovery Rectifier 40A 200ns
Fast Recovery Rectifier, 40A, 200ns
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
| 5962-8876904KYA 5962-8876904KYC 5962-8876904KPA 59 |
5962-8876801PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
|
Agilent (Hewlett-Packard)
|
| P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC;
General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
| 2SC3734 |
High speed : tstg 200ns. Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| AM-427-1A AM-427-2B AM-427-1B |
200NS, 32LCC, 883C; LEV B COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
200NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
250NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM) 电压反馈运算放大
|
Honeywell International, Inc.
|
| IRS2133JPBF IRS2133JTRPBF |
3 Phase Driver, Separate High and Low Side Inputs, 200ns Deadtime in a mod. 44-lead PLCC package
|
International Rectifier
|
| IS62LV1024 IS62LV1024LL IS62LV1024L IS62LV1024L-45 |
128K x 8 LOW POWER AND LOW Vcc 128K的8低功耗和低成本吓
128K*8 LOW POWER AND LOW Vcc CMOS STATIC RAM
ASYNCHRONOUS STATIC RAM
|
Samsung Semiconductor Co., Ltd.
Glenair, Inc.
N.A.
ICSI[Integrated Circuit Solution Inc]
|
| MX25R1635F |
Wide Vcc Range, 16M-BIT
|
Macronix International
|
| DS2411 DS2411X |
Silicon Serial Number with Vcc Input
|
Maxim Integrated Products
|
| DS2411R-105-B5CAT |
Silicon Serial Number with VCC Input
|
MAXIM - Dallas Semiconductor
|
| AT1042 |
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
|
Diodes
|
