| PART |
Description |
Maker |
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SSTS20L60CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100R |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20100 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD1045D |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SMA6J |
High Junction Temperature Transil
|
ST Microelectronics
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| MBR10H150CT MBRF10H150CT MBRB10H150CT-1 |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175C
Diodes
|
VISAY[Vishay Siliconix]
|
| BCR10CM-12LB BCR10CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
