| PART |
Description |
Maker |
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA1575 2SC4080 2SC4080C 2SA1575C 2SA1575D 2SC4080 |
晶体管|晶体管|进步党| 200伏五（巴西）总裁| 100mA的一（c）|36VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-236VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
High-Frequency Amp, Wide-Band Amp Applications
High-Frequency Amp/ Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| S2GVB80-C S2GVB40-C S2GVB60-C |
Voltage 200V ~800V 2 Amp Glass Passivited Bridge Rectifers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| S1GVB60-C |
Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnol...
|
| BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| SCDS103 SCDS101 SCDS10112 SCDS102 |
Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SFG20ED100 |
Voltage 100V ~ 600V 20.0 Amp Super Fast Rectifier
|
SeCoS Halbleitertechnol...
|
| AZ987 AZ987-1C-10DE AZ987-1C-12DE AZ987-1A-10DE AZ |
CAP 27PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014 30放大器微型功率继电器用于汽车
CAP 33PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
CAP 22PF 200V 200V X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
30 AMP SUBMINIATURE POWER RELAY FOR AUTOMOTIVE USE
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
ZETTLER electronics
|
| A29040AV-90 A29040A-70 A29040A-90 A29040AV-55 A290 |
AUTOMATIC 600A CLAMPMETER WITH AUTOTECT RoHS Compliant: NA
512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Test RoHS Compliant: NA
Fuse; Current Rating:1A; Voltage Rating:600V; Voltage Rating:600V; Voltage, AC:600V RoHS Compliant: NA 512k × 8位CMOS 5.0伏只，统一部门快闪记忆
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| ES1GF ES1DF |
1A, 200V - 600V Surface Mount Super Fast Rectifiers
|
Taiwan Semiconductor Co...
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
