| PART |
Description |
Maker |
| BYW27-400GP BYW27-100GP BYW27-600GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
TOKO, Inc. Vishay Beyschlag
|
| J4248 SV4247US SV4248US SV4249US |
1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
| GL41YHE3/97 BYM10-600-E3/96 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-213AB ROHS COMPLIANT, PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag VISHAY SEMICONDUCTORS
|
| BY133 1N4005 1N4004 |
Silicon Rectifier Diodes 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
EIC discrete Semiconductors Electronics Industry Public Company Limited EIC SEMICONDUCTOR INC
|
| MRA4005T3 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
MOTOROLA INC
|
| GPP10J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| ER1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| ERA22-02 ERA22-06 |
0.5 A, 200 V, SILICON, SIGNAL DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE
|
FUJI ELECTRIC CO LTD
|
| GPP10J-E3-73 GPP10J-E3-54 GPP10J-E3/73 GPP10A09 |
Glass Passivated Junction Rectifier 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
| BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3 |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag VISHAY SEMICONDUCTORS
|
|