| PART |
Description |
Maker |
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| D5006-24 D5006-36 DVF4559-04 |
60 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
130 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
|
SKYWORKS SOLUTIONS INC
|
| NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| ATF-25735 |
0.5-10 GHz General Purpose Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| ATF-26836 ATF-26836-STR ATF-26836-TR1 |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF13284 |
1-16 Ghz Low Noise Gallium Arsenide FET
|
Agilent Technologies
|
| ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard...
HP[Agilent(Hewlett-Packard)]
|
| PE87FL1013 |
11 Section Bandpass Filter With SMA Female Connectors Operating From 2 GHz to 4 GHz With a 2 GHz Passband
|
Pasternack Enterprises,...
|
| NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| PE82P2000 |
Analog Phase Shifter, 5 GHz to 18 GHz, With an Adjustable Phase of 40 Deg. Per GHz and SMA
|
Pasternack Enterprises,...
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
