| PART |
Description |
Maker |
| SKIIP03NAC066V1 |
Large Current 300mA CMOS LDO Regulators; Output voltage (V): 2.8; Output current (mA): 300; Supply voltage (V): 2.5 to 5.5; I/O voltage difference (mV): 60; Ripple rejection (dB): 60; Circuit current (µA): 65; Package: HVSOF6
3-phase bridge rectifier 3-phase bridge inverter
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Semikron International
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| X4005S8 X4005S8-1.8 X4005S8-2.7 X4005S8-2.7A X4005 |
RTC Module With CPU Supervisor 时钟模块CPU监控
DIODE, STUD 95A 400VDIODE, STUD 95A 400V; Voltage, Vrrm:400V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Cathode
MODULE DROP IN FOR XE1203 868MHZ
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):70A; Non Repetitive Forward Surge Current Max, Ifsm:1150A; Forward Voltage Max, VF:1.5V; Package/Case:DO-203AB
THYRISTOR, CAPSULE, 550A; Thyristor/Triac type:Thyristor; Voltage, Vdrm:1200V; Current, It rms:1200A; Current, Itsm:9000A; Current, Igt:250mA; Voltage, Vgt:1.65V; Case style:TO-200; Current, It av:550A; Diameter, External:41mm; RoHS Compliant: Yes
|
Intersil, Corp.
XICOR[Xicor Inc.]
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| AP1623SLA AP1623 AP1623S AP1623SA AP1623SL |
Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
PWM Control Step-Down Switching Regulator-Converter
|
ETC
ANACHIP[Anachip Corp]
|
| HDP01-0512NRL HDLA-2416 HDLG-2416 HDLU-2416 HDLO-2 |
Voltage Regulator IC; Package/Case:3-TO-220; Current Rating:1A; Output Voltage Max:5V; Voltage Regulator Type:Negative Voltage; Mounting Type:Through Hole
Linear Voltage Regulator IC; Supply Voltage Max:35V; Package/Case:3-TO-220; Output Voltage:5V; Current Rating:1A; Voltage Regulator Type:Positive Voltage; Mounting Type:Through Hole RoHS Compliant: Yes
Voltage Regulator IC; Package/Case:3-TO-220; Supply Voltage:35V; Output Current:1A; Output Voltage:18V; Voltage Regulator Type:Positive Voltage; Mounting Type:Through Hole
HARD DISK DRIVE POWER SUPPLY PROTECTION
Four Character 5.0 mm (0.2 inch) Smart 5 x 7 Alphanumeric Displays
|
ST Microelectronics
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
http://
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
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INTERSIL[Intersil Corporation]
|
| TS5204CY50 TS5204 TS5204CX TS5204CX1.8 TS5204CX18 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
150mA Low Noise LDO Voltage Regulator
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
http://
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BD241CFP |
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Samsung Semiconductor Co., Ltd.
|
| X76F640 X76F640A X76F640A-2.7 X76F640AE X76F640AE- |
Secure SerialFlash
:SEMIPACK-1; Thread size:M5; Centres, fixing:80mm; Current, Itsm:700A; Depth,
DIODE, STANDARD, 80A, 1200V; Voltage, Vrrm:1200V; Current, If av:80A; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, Ifs max:2000A; Current
; Repetitive Reverse Voltage Max, Vrrm:800V; Forward Current Avg Rectified, IF(AV):82A; Forward Voltage Max, VF:1.55V; Package/Case:SEMIPACK 1
Thyristor Diode Module; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
Xfmr Module
|
http://
XICOR[Xicor Inc.]
|
| Z86E23-04PSC |
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:275V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V 8位微控制
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Winbond Electronics, Corp.
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