| PART |
Description |
Maker |
| STF26NM60N-H |
Low gate input resistance
|
意法半导
STMicroelectronics
|
| 2SK1960 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=0.8 MAX
|
TY Semiconductor Co., L...
|
| 2SK1959 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX
|
TY Semiconductor Co., Ltd
|
| 2SK3510 |
Super low on-state resistance: RDS(on) = 8.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK3479 |
Super low on-state resistance: RDS(on)1 = 11 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., L...
|
| 2SK3511 |
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| BCP52M |
PNP Silicon AF Transistor for AF driv...
|
Infineon
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| STGWT30V60F STGW30V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
STMicroelectronics
ST Microelectronics
|
