| PART |
Description |
Maker |
| UPD166013T1J UPD166013T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166023T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166101GR20 UPD166100BV UPD166100GR UPD166100GR2 |
N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE
|
NEC[NEC]
|
| TPD4131K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4144K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| TPD1024S |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
|
TOSHIBA[Toshiba Semiconductor]
|
| ATP213-TL-H ENA1526A ATP213 |
N-Channel Power MOSFET, 60V, 50A, 16mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| DLX2416 |
Intelligent Display Device
|
OSRAM GmbH
|
| DLX3416 |
Intelligent Display Device
|
OSRAM GmbH
|
| 2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3.0A/60V/30W)
POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
