| PART |
Description |
Maker |
| MDS9651 |
Complementary N-P Channel Trench MOSFET
|
MagnaChip
|
| KHC21025 |
Complementary enhancement mode MOS transistors
|
http:// Guangdong Kexin Industrial Co.,Ltd
|
| PHC20512 |
Complementary enhancement mode MOS transistors
|
PHILIPS[Philips Semiconductors]
|
| PHC2300 |
Complementary enhancement mode MOS transistors
|
Philips
|
| PHC2300 |
Complementary enhancement mode MOS transistors
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC
|
| KU035N06P |
N-ch Trench MOS FET
|
KEC
|
| VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT3045BP-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|