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HUR830 - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

HUR830_7820308.PDF Datasheet


 Full text search : High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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