| PART |
Description |
Maker |
| 1N2131AR 1N2129A 1N2128AR 1N2129AR 1N2130A 1N2130A |
DEVICE HIGH POWER STANDARD
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America Semiconductor, LLC
America Semiconductor, ...
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| ATV2500BQL-30KM/883 ATV2500BBQBQL |
High-speed High-density UV-erasable Programmable Logic Device(高速高密度紫外线可擦除PLD)
ATV2500B(BQ)(BQL) [Updated 5/00. 21 Pages] 2500 gate high-speed CPLD. standard & low power. 40 & 44 pins offered in Military Temp Grade only.
|
聚兴科技股份有限公司
Atmel Corp.
|
| U74LVC2G86L-S08-T U74LVC2G86L-S08-R U74LVC2G86G-S0 |
This device has power-down protective circuit, preventing device destruction when it is powered down.
Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
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Unisonic Technologies
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| SBH52444G-FSAN SBH52444X SBH52444Z-FSAN SBH52444N- |
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, 155 MBit/s TIA
High Power BIDI Optical Standard Module 1310 nm Emitting 1550 nm Receiving
From old datasheet system
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving
Snap-in Panel Mount Switch, Double Pole Double Throw (DPDT) Circuitry, 10 A at 277 Vac, Bullet Nose Plunger Actuator, Silver Contacts, Quick Connect Termination
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http://
INFINEON[Infineon Technologies AG]
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| ICS97U2A845A ICS97U2A845AHLF-T |
Double the drive of the standard 97U877 device
1.8V Low-Power Wide-Range Frequency Clock Driver
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Integrated Device Techn...
Integrated Circuit Systems
|
| SBH52454Z-FSAN SBH52454G-FSAN SBH52454N-FSAN SBH52 |
High Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 高功率比迪光学标准模310纳米发光550纳米接收
High Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, 622 MBit/s TIA
|
INFINEON[Infineon Technologies AG]
http://
|
| TPD4124AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4111K |
Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SCNAR05 SCNAR1 SCNAR2 SCNAR4 SCNAR6 SCNAR8 SCDAR8 |
High Current, Standard Recovery Doubler Rectifier(反向电压800V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压100V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压50V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压400V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压600V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
High Current, Standard Recovery Doubler Rectifier(反向电压200V，温5℃时平均整流电流22.5A,大电标准恢复倍增整流
STANDARD RECOVERY DOUBLER AND CENTER TAPS
|
Semtech Corporation
|
| AM29F200BT-120DPC1 AM29F200BT-75DPC1 AM29F200BT-90 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3315 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL8113 with Standard Packaging
40V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3504 with Lead Free Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL42N20D with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF2907Z with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLIZ34N with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFB38N20D with Lead Free Packaging
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR9N20D with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EZL with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7459 with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3711ZCS with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ44EL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7455 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3105 with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS23N15D with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF2907ZL with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF640NS with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB3207ZPBF with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3715Z with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3410 with Lead Free Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL31N20D with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFI540N with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package; A IRF7607 with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR3715ZCPBF with Standard Packaging
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1404ZL with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLI3615 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7821 with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR24N15D with Standard Packaging
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package; A IRFPS3815 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL4410ZPBF with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB42N20D with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS3207ZPBF with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3711Z with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFB4310 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3709ZL with Standard Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054V with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package; A IRF3205Z with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR1205 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3710 with Standard Packaging
EEPROM EEPROM
|
EEPROM
Elpida Memory, Inc.
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
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ST Microelectronics, Inc.
STMicroelectronics
|
