| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX856 |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
|
NEC[NEC]
|
| NDL5003 |
1300NM OPTICAL FIBER COMMUNICATIONS INGAASP DOUBLE HETEROSTRUCTURE LASER DIODE
|
NEC
|
| NDL7705P2D NDL7705P2C NDL7705P1D NDL7705P1C |
1500 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE
|
NEC
|
| NDL7672P NDL7672PC NDL7672PD |
1310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE
|
NEC
|
| SLD432S |
Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| SLD1332V |
The Industrys Highest Power 670 nm Band Laser Diode Achieves 500 mW Optical Power Output
|
List of Unclassifed Manufacturers
ETC
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
