| PART |
Description |
Maker |
| AXLH272P040EL |
High Temperature Axial Leaded Aluminum Electrolytic Capacitors
|
Cornell Dubilier Electr...
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| VR37000002203JA100 VR37000001504FA100 VR3700000100 |
High Ohmic/High Voltage Metal Glaze Leaded Resistors
|
Vishay Siliconix
|
| HVR2500003304FA500 HVR3700003304FA500 |
High Ohmic/High Voltage Metal Film Leaded Resistors
|
Vishay Siliconix
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TX7-705C-S-HP |
High precision SMD TCXO High frequency stability vs. temperature 0.10 ppm
|
QUARTZCOM the communications company
|
| HTDR-3 |
300 NANOSECOND AT HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
|
Electronic devices inc.
|
| TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-1 |
Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| TMPG06-10 TMPG06-10A TMPG06-7.5A TMPG06-6.8 TMPG06 |
PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 32209340 32209341 32209345 |
MR series elements are designed for applications where high vibration resistance as well as high temperature stability are vital
|
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