| PART |
Description |
Maker |
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| Q67040-S4340 SKP06N60 Q67040-S4230 Q67040-S4231 SK |
Fast S-IGBT in NPT-Technology with An...
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT Diode
IGBTs & DuoPacks - 6A 600V TO220-3-31 (Fullpack) IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SKB02N60 SKP02N60 |
IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| STGD10NC60H GD10NC60H |
N-channel 10A - 600V - DPAK Very fast PowerMESH?/a> IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH⑩ IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH IGBT
|
STMicroelectronics
|
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
International Rectifier
IRF
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| APT100GF60JR |
Fast IGBT 600V 100A
|
Advanced Power Technology
|
| STGP7NC60HD STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD |
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT N沟道14A - 600V TO-220/TO-220FP/DPAK非常IGBT的快速PowerMESH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
