| PART |
Description |
Maker |
| CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR
100 MHz - 400 MHz RF/MICROWAVE ISOLATOR
400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| CA2818C |
18.5 dB 0.35-400 MHz 1000 mWATT WIDEBAND LINEAR AMPLIFIER 0.35 MHz - 400 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| CECWP2G272M2-L22 CECWP2G392M3-L22 CECWP2G102M1-L22 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2700 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 330 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 5600 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1800 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3300 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 560 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 470 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1500 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 390 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 4700 uF, CHASSIS MOUNT
|
Nippon Chemi-con, Corp.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UMIL100A |
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 100; P(in) (W): 16; Gain (dB): 8; Vcc (V): 28; Cob (pF): 120; fO (MHz): 0; Case Style: 55JU-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
100 Watts / 28 Volts / Class AB Defcom 225 - 400 MHz
100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
|
Microsemi, Corp.
Electronic Theatre Controls, Inc.
ETC
GHZTECH[GHz Technology]
|
| B39401-B4832-U310 B4832 |
1 FUNCTIONS, 400 MHz, SAW FILTER
SAW Components Low-Loss Filter for Mobile Communication 400,0 MHz
|
EPCOS AG
EPCOS[EPCOS]
|
| AD9951YSVZ |
400 MSPS 14-Bit DAC 1.8 V CMOS Direct Digital Synthesizer
|
Analog Devices
|
| AD9951 |
400 MSPS 14-Bit DAC 1.8 V CMOS Direct Digital Synthesizer
|
Analog Devices
|
| ADSP-BF533SBBZ500 ADSP-BF533SBBC500 ADSP-BF533SKBC |
750 MHz Blackfin Processor for Video/Imaging
400 MHz Low Cost Blackfin Processor
400 MHz High Performance Blackfin Processor
|
Analog Devices
|
| DS-113 |
Two-Way Power Divider 400 kHz - 400 MHz
|
Tyco Electronics
|
| T0790-6C |
700 MHz - 2700 MHz direct quadrature modulator.
|
Atmel Corporation
|
|
