| PART |
Description |
Maker |
| RJP60V0DPM-80-15 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60M0DPQ-E0 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJP60V0DPM |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60A85RDPE-15 |
600V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D1DPP-M0-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| STP22NM60 STB22NM60 STB22NM60-1 STF22NM60 STW22NM6 |
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmeshPower MOSFET
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET N沟道600V 0.19欧姆- ⑩第22A TO-220/FP/D2PAK/I2PAK/TO-247的MDmesh功率MOSFET
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
