| PART |
Description |
Maker |
| MSM531655E-XXGS-K MSM531655E-XXTS-K MSM531655E |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| MB8128 |
MOS 16384 Bit SRAM
|
Fujitsu
|
| M5M2168P |
16384-Bit Static RAM
|
Mitsubishi Electric
|
| HYB4116-2 HYB4116-3 |
(HYB4116-2/-3) 16384-Bit DRAM
|
Infineon Technologies
|
| UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
| S6831B |
16384 Bit Static NMOS ROM
|
AMI Semiconductor
|
| MB8417-20 MB8417-20L |
CMOS 16384-Bit Static RAM
|
Fujitsu
|
| HN27128AG-17 |
16384-word x 8-Bit UV Erasable Programmable ROM
|
Hitachi Semiconductor
|
| MBM2716 MBM2716-X MBM2716H |
UV ERASABLE 16,384-BIT READ ONLY MEMORY
UV Erasable 16384 Bit ROM
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TC554001AFI TC554001AFI-10 TC554001AFI-10L TC55400 |
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:55; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:17-35 RoHS Compliant: No
LJT 39C 38#22D 1#8(TWINAX) PIN
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
