| PART |
Description |
Maker |
| K3N4V1000D-DC10 |
512K X 16 MASK PROM, 100 ns, PDIP42
|
|
| MSM538022CRS MSM531031BGS-K |
1M X 8 MASK PROM, 100 ns, PDIP42
128K X 8 MASK PROM, 150 ns, PDSO32
|
OKI ELECTRIC INDUSTRY CO LTD
|
| MX23L8103TC-70 MX23L8103TC-90 |
8M-BIT MASK ROM 512K X 16 MASK PROM, 70 ns, PDSO48
8M-BIT MASK ROM 512K X 16 MASK PROM, 90 ns, PDSO48
|
Fujitsu, Ltd.
Macronix International Co., Ltd.
|
| MN12261 MN12C25D MN12C201D |
128 X 16 MASK PROM, 6 ns, PDIP16 0.300 INCH, PLASTIC, DIP-16
38 X 16 MASK PROM, 2 ns, PSIP9
64 X 16 MASK PROM, 2 ns, PDIP16
|
Panasonic, Corp.
PANASONIC CORP
|
| K3N3C3000D-YE120 |
512K X 8 MASK PROM, 120 ns, PDSO32
|
|
| K3N3C1000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40
|
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| MX23L1613TC-70 |
16M-BIT MASK ROM 1M X 16 MASK PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MSM538022E OKISEMICONDUCTORCO.LTD.-MSM538022E MSM5 |
512K X 16 MASK PROM, 80 ns, PDSO44
From old datasheet system
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit MASKROM
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| AM29LV800BT90SCB AM29LV800BB70FIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29DL400BB-70SIB AM29DL400BT-70SIB DL400BB-120EEB |
512K X 8 FLASH 3V PROM, 70 ns, PDSO44
512K X 8 FLASH 3V PROM, 120 ns, PDSO48
|
SPANSION LLC
|
