| PART |
Description |
Maker |
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGI0910-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| MAGX-000025-150000-V1 MAGX-000025-150000-15 |
GaN on SiC HEMT Power Transistor
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| TGF2023-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| CGH27030F |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
