| PART |
Description |
Maker |
| AN-0002 |
Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers
|
ANADIGICS, Inc
|
| DTC143EKAT146 |
Built-In Biasing Resistors, R1 = R2 = 4.7kW.
|
Rohm
|
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB502CBS-TL-H BB502C11 |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB302M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB301MAW-TL-E BB301M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB503CCS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB304C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB502M BB502 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| BB303M |
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|
