| PART |
Description |
Maker |
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| MRF275L |
The RF MOSFET Line 100W, 500MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28100V |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| UF28100H |
RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz
|
Tyco Electronics
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
