| PART |
Description |
Maker |
| VSKJ320-12 VSKJ320-20 VSKC250-20 VSKE250-16 VSKC27 |
320 A, 1200 V, SILICON, RECTIFIER DIODE
320 A, 2000 V, SILICON, RECTIFIER DIODE
250 A, 2000 V, SILICON, RECTIFIER DIODE
250 A, 1600 V, SILICON, RECTIFIER DIODE
270 A, 400 V, SILICON, RECTIFIER DIODE
270 A, 1600 V, SILICON, RECTIFIER DIODE
|
VISHAY INTERTECHNOLOGY INC
|
| SDR2HF1.81 SDR2HF1.8SMS SDR2HF2.0SMS |
2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER 2 A, 1800 V, SILICON, RECTIFIER DIODE
2 AMPS 1800 - 2000 VOLTS 35 nsec HYPER FAST RECOVERY RECTIFIER 2 A, 2000 V, SILICON, RECTIFIER DIODE
|
http://
Solid State Devices, Inc.
|
| GP02-20 |
0.25 A, 2000 V, SILICON, SIGNAL DIODE, DO-204AL
|
|
| DD540N |
573 A, 2000 V, SILICON, RECTIFIER DIODE
|
|
| DZ540N20K |
732 A, 2000 V, SILICON, RECTIFIER DIODE
|
|
| 305U200 |
330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB
|
VISHAY SEMICONDUCTORS
|
| FR1Y FR1V FR1ZZ |
1 Amp Fast Recovery Silicon Rectifier 1200 to 2000 Volts
|
Micro Commercial Components Corp.
|
| BYD47-20135 BYD47-20/T3 |
0.34 A, 2000 V, SILICON, SIGNAL DIODE HERMETICAL SEALED, GLASS PACKAGE-2
|
NXP Semiconductors N.V.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| UPC2260 UPC2260V |
UPC2260 Data Sheet | Data Sheet[06/2000] UPC2260数据表|数据表[06/2000]
Low saturated stabilizing power circuit with a system
|
Atmel, Corp.
NEC
|
|
