| PART |
Description |
Maker |
| TT2140LS SANYOELECTRICCO.LTD.-TT2140LS |
6 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric
SANYO[Sanyo Semicon Device]
|
| APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| BU4525DF |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BU2527A |
Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU4523AX |
Silicon Diffused Power Transistor 11 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU4508AX |
Silicon Diffused Power Transistor 8 A, 800 V, NPN, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| KSC5027 C5027 KSC5027N KSC5027O KSC5027R |
High Voltage and High Reliability 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STB18NM80 STF18NM80 STP18NM80 STW18NM80 |
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
