| PART |
Description |
Maker |
| USB-COM232-PLUS-2 USB-COM232-PLUS2 |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT232RL |
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
|
| VNC1L-1A-TRAY VNC1L-1A-REEL |
Vinculum VNC1L Embedded USB Host Controller IC
Future Technology Devices International Ltd.
|
Future Technology Devices International Ltd.
|
| AN209 |
Using Terminator Technology in Stratix & Stratix GX Devices
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Altera Corporation
|
| 2FB-48-M |
FUTURE BUS 48 POSITION STRAIGHT MALE
|
Adam Technologies, Inc.
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
