PART |
Description |
Maker |
STS9NF30L |
N-CHANNEL 30V - 0.015 OHM - 9A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics
|
SQM50P06-15L-GE3 |
50 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
SQJ461EP-T1-GE3 |
21.7 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
|
Vishay Intertechnology, Inc.
|
MTP50N06EL MTP50N06 |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
SUD50P06-15L |
50 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 TO-252, 3 PIN
|
Vishay Intertechnology, Inc.
|
SPB46N03 SPP46N03 P46N03 |
SIPMOS-TM POWER TRANSISTOR 46 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 From old datasheet system SIPMOS Power Transistor
|
SIEMENS AG Infineon
|
MTW33N10E ON2695 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MTD6P10E ON2515 MTD6P10E-T4 |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|
MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
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