| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 1214-150L |
150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| CM1400E3U-24NF |
Mega Power Chopper IGBTMOD 1400 Amperes/1200 Volts
|
Powerex Power Semicondu...
|
| 1214-800P |
800 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| ACLM-4603HC88R-RC |
1200 MHz - 1400 MHz RF/MICROWAVE LIMITER ROHS COMPLIANT, CASE C88
|
Sumida, Corp.
|
| IRKCL240-12S30 IRKCL240-12S10 IRKCL240-14S20NPBF I |
240 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| 5STF06T1408 5STF06T1208 |
892 A, 1400 V, SCR
892 A, 1200 V, SCR
|
ABB SWITZERLAND LTD SEMICONDUCTORS
|
| CM75TF-28H |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| PH1214-25S |
1200-1400 MHz,25 W, 1 ms pulse,radar pulsed power transistor
Radar Pulsed Power Transistor, 25W, lus Pulse, 10% Duty 1.2-1.4 GHz
|
MA-Com
M/A-COM / Tyco Electronics
|
