| PART |
Description |
Maker |
| C10322D |
Flat panel sensor High sensitivity, high-speed frame rate, high resolution
|
Hamamatsu Corporation
|
| MRY1518BTA |
1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch
|
AnaSem Hong Kong Limited
|
| PD481PIE000F |
High Speed, High Sensitivity Photodiode
|
Sharp Electrionic Components
|
| MRY1518E MRY1518ETA |
12.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch
MR Sensor IC (Continuous Type)
|
AnaSem Hong Kong Limited
|
| S9703-01 S9703 |
Photo IC for laser beam synchronous detection High sensitivity, high-speed response
|
Hamamatsu Corporation
|
| UM-1MESA |
High frequency fundamental through hole Crystal High pulling sensitivity (ppm/pF)
|
QUARTZCOM the communications company
|
| PC845 |
High Sensitivity, High Density Mounting Type Photocoupler
|
Sharp Electrionic Compo...
|
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| U310 U309 SST310-T1-E3 SST309-T1-E3 SST308 J310 |
Very High System Sensitivity
N-Channel JFETs
Very High System Sensitivity
|
Vishay Siliconix
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TPC8105-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
|
TOSHIBA
|
