| PART |
Description |
Maker |
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXSH35N135A IXSH35N140A |
1350V high speed IGBT
1400V high speed IGBT
|
IXYS
|
| IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGH30N60 IXGM30N60A IXGH30N60A IXGM30N60 |
LOW VCE(SAT) IGBT, HIGH SPEED IGBT
|
IXYS[IXYS Corporation]
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
