| PART |
Description |
Maker |
| M57704SH 57704SH |
490-512MHz 12.5V /13W /FM MOBILE RADIO
490-512MHz 12.5V,13W,FM MOBILE RADIO
490-512MHZ, 12.5V, 13W, FM MOBILE RADIO
490-512MHz 12.5V13WFM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| M57788SH |
490-512 MHz 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| M57788UH |
470-490 MHz 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| NX7437AG-AA NX7437BF-AA |
1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| KSA1625KTA KSA1625KBU |
PNP Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BUT11TU |
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| KSE13003 KSE13003H2AS KSE13003AS KSE13003ASTU KSE1 |
High Voltage Switch Mode Applications 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FJN13003TA |
NPN Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| CECWP2G272M2-L22 CECWP2G392M3-L22 CECWP2G102M1-L22 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2700 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 330 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 5600 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1800 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3300 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 560 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 470 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1500 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 390 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 4700 uF, CHASSIS MOUNT
|
Nippon Chemi-con, Corp.
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
|
