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IFS75S12N3T4B11 - High Power RF LDMOS FETs

IFS75S12N3T4B11_7697057.PDF Datasheet


Part No.	IFS75S12N3T4B11
Description	High Power RF LDMOS FETs
File Size	460.99K / 13 Page
Maker	Infineon Technologies AG
Homepage	http://www.infineon.com/
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Related Part Number

PART	Description	Maker
IFS75B12N3T4B31	High Power RF LDMOS FETs	Infineon Technologies AG
PTFA180701E PTFA180701EV4R0 PTFA180701EF PTFA18070	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies A...
PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies A...
PTF140451E PTF140451F	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz	Infineon Technologies AG
PTFA241301E PTFA241301F PTFA241301FV1	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz	Infineon Technologies AG Infineon Technologies A...
PTFA212001E PTFA212001F	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz	Infineon Technologies AG
PTFA181001GL PTFA181001HL	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz	Infineon Technologies AG
PTFB211501F PTFB211501E	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz	Infineon Technologies AG
PTFB191501E PTFB191501F	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz	Infineon Technologies AG
PTFA191001E PTFA191001F	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz	Infineon Technologies AG
PTFA091203EL	Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz	Infineon Technologies AG

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