Part Number Hot Search : 
50222 60UFD 3306A 132PW DG300A PM8011 TSC3824 12N50
Product Description
Full Text Search

GS8182T18BD-200 - 1M X 18 DDR SRAM, 0.45 ns, PBGA165 1M X 18 DDR SRAM, 0.5 ns, PBGA165

GS8182T18BD-200_7700726.PDF Datasheet


 Full text search : 1M X 18 DDR SRAM, 0.45 ns, PBGA165 1M X 18 DDR SRAM, 0.5 ns, PBGA165
 Product Description search : 1M X 18 DDR SRAM, 0.45 ns, PBGA165 1M X 18 DDR SRAM, 0.5 ns, PBGA165


 Related Part Number
PART Description Maker
CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Cypress Semiconductor, Corp.
CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
CYPRESS SEMICONDUCTOR CORP
CY7C1427AV18-250BZI 36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
GS8662S09E-167I 72Mb Burst of 2 DDR SigmaSIO-II SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
GSI Technology, Inc.
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
Renesas Technology / Hitachi Semiconductor
CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
CY7C1416AV18-167BZXI CY7C1416AV18-167BZC CY7C1416A 36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- 512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
Samsung semiconductor
CY7C1423AV18-300BZI CY7C1423AV18-200BZI CY7C1429AV 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
IS61DDPB21M36A-333M3LI IS61DDPB21M36A-300M3I IS61D 1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165
1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
Integrated Silicon Solution, Inc.
 
 Related keyword From Full Text Search System
GS8182T18BD-200 level GS8182T18BD-200 资料网站 GS8182T18BD-200 astable multivibrators GS8182T18BD-200 Package GS8182T18BD-200 Crystals
GS8182T18BD-200 ohm GS8182T18BD-200 samsung GS8182T18BD-200 gain GS8182T18BD-200 Ultra GS8182T18BD-200 voltage
 

 

Price & Availability of GS8182T18BD-200

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.45211410522461