| PART |
Description |
Maker |
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| IRLR7821PBF IRLU7821PBF IRLR7821PF IRLR7821PBF-15 |
Ultra-Low Gate Impedance
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
High Frequency Synchronous Buck
|
International Rectifier
|
| IRHMB58064 IRHMB53064 IRHMB54064 IRHMB57064 |
45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
|
IRF[International Rectifier]
http://
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| STY25NA60 6064 |
N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 600V - 0.225 - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| AUIRF4104 AUIRF4104S AUIRF4104STRL AUIRF4104STRR |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| AP4407GM-HF AP4407GM-HF-14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement, Low On-resistance
10.7 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP7811GM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Low On-Resistance, Fast Switching
11.8 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| STW80NF10 7305 |
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFETPOWER MOSFET N沟道100V 0.012ohm - 80A 247低栅极电荷STripFET⑩功率MOSFET
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V 0.012 OHM 80A TO-247 LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
